A series of Ni films with thickness from 0.2 monolayers (ML) to 12.5 ML were epitaxially grown on a Pd(1 0 0) substrate at room temperature. Growth and morphology were investigated by scanning tunneling microscopy (STM), reflection-high-energy-electron diffraction (RHEED) and Auger electron spectros
Growth of ultra-thin amorphous Al2O3 films on CoAl(1 0 0)
β Scribed by V Rose; V Podgursky; I Costina; R Franchy
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 274 KB
- Volume
- 541
- Category
- Article
- ISSN
- 0039-6028
No coin nor oath required. For personal study only.
β¦ Synopsis
The oxidation of a CoAl(1 0 0) surface at 300 K was studied by means of Auger electron spectroscopy, high resolution electron energy loss spectroscopy (EELS), low energy electron diffraction and scanning tunneling microscopy (STM). For an exposure 6 0.3 L, the oxygen atoms are chemisorbed on the CoAl(1 0 0) surface, while for a larger O 2 exposure the oxidation of the surface sets in. For an exposure P 300 L the surface is entirely covered with amorphous Al 2 O 3 (a-Al 2 O 3 ) whereas the Co atoms seem to be unaffected. The EEL spectra of a-Al 2 O 3 exhibit Fuchs-Kliewer modes at around 640 and 890 cm Γ1 . The thickness of the a-Al 2 O 3 film is estimated to be 7.1 Β± 0.7 A A. The STM images show that the oxide grows as large islands which cover the whole surface. The band gap of the ultra-thin a-Al 2 O 3 film on CoAl(1 0 0) is found to be 3.2 eV and thus it is strongly diminished with respect to the bulk value.
π SIMILAR VOLUMES