✦ LIBER ✦

Growth of thin thermal silicon dioxide films with low defect density

✍ Scribed by R. Singh

Book ID: 118350032
Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 608 KB
Volume: 23
Category: Article
ISSN: 0026-2692
DOI: 10.1016/0026-2692(92)90024-u

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth of thin thermal silicon dioxide f

Growth of thin thermal silicon dioxide films with low defect density : R. Singh. Microelectronics Journal23, 273 (1992)

📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 115 KB

Low temperature VUV enhanced growth of t

Low temperature VUV enhanced growth of thin silicon dioxide films

✍ Parthiv Patel; Ian W. Boyd 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 340 KB

Defect sites in thin films of germanium

Defect sites in thin films of germanium dioxide irradiated with silicon ions

✍ O. N. Gorshkov; D. I. Tetel’baum; I. N. Antonov; A. N. Mikhailov; V. A. Kamin; A 📂 Article 📅 2007 🏛 Pleiades Publishing 🌐 English ⚖ 139 KB

Thermal transport properties of gold-cov

Thermal transport properties of gold-covered thin-film silicon dioxide

✍ M. Burzo; P. Komarov; P. Raad 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 960 KB

Kinetics of thermal growth of thin silic

Kinetics of thermal growth of thin silicon oxide films

✍ G.C. Sarti; F. Santarelli; G. Camera Roda 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 727 KB

thermal growth of dry SiOs layers is usually described by the so-called linear parabolic equation, based on the assumption that oxygen diffusion takes place in the oxide layer according to Fick's law with constant dilfusivity, and that the oxidation occurs at the Si-Si02 interface with a first-order

The Growth and Characterization of Very

The Growth and Characterization of Very Thin Silicon Dioxide Films

✍ Adams, A. C. 📂 Article 📅 1980 🏛 The Electrochemical Society 🌐 English ⚖ 873 KB