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Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy

✍ Scribed by M. E. Overberg; G. T. Thaler; C. R. Abernathy; N. A. Theodoropoulou; K. T. McCarthy; S. B. Arnason; J. S. Lee; J. D. Lim; S. B. Shim; K. S. Suh; Z. G. Khim; Y. D. Park; S. J. Pearton; A. F. Hebard


Book ID
107453015
Publisher
Springer US
Year
2003
Tongue
English
Weight
662 KB
Volume
32
Category
Article
ISSN
0361-5235

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Epitaxial Mn-doped ZnO diluted magnetic
✍ Z. Yang; Z. Zuo; H.M. Zhou; W.P. Beyermann; J.L. Liu πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 682 KB

A growth window for the Mn effusion cell temperature (T Mn ) is demonstrated for epitaxial Mn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at T Mn ΒΌ 700