Epitaxial Tl-2201 films have been prepared on single crystal LaAlO 3 substrates. Precursor films made by laser ablation were treated with Tl 2 O(g) at high temperature in near-equilibrium conditions. The effects of annealing temperature, heating rate and stoichiometry of the Tl 2 O(g) source on the
β¦ LIBER β¦
Growth of SmNiO3 Thin Films on LaAlO3 Single Crystals
β Scribed by Nejib Ihzaz; Mohamed Oumezzine; Jens Kreisel; Henri Vincent; Stephane Pignard
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 155 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0948-1907
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