Epitaxial Tl-2201 Thin Films on Single Crystal LaAlO3: Preparation and Properties

✍ Scribed by Chen, H. Q. ;Johansson, L.-G. ;Ivanov, Z. G. ;Erts, D.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 342 KB
• Volume: 172
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199903)172:1<165::aid-pssa165>3.0.co;2-r

✦ Synopsis

Epitaxial Tl-2201 films have been prepared on single crystal LaAlO 3 substrates. Precursor films made by laser ablation were treated with Tl 2 O(g) at high temperature in near-equilibrium conditions. The effects of annealing temperature, heating rate and stoichiometry of the Tl 2 O(g) source on the properties of the films were investigated. By optimizing the method of preparation, highly smooth, c-axis oriented and epitaxial films were obtained. The rocking curve of the (0, 0, 10) reflection had a FWHM of 0. 27 . A maximum T c of 92 K was achieved in as-annealed films.