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Growth of single phase GaAs[sub 1−x]N[sub x] with high nitrogen concentration by metal–organic molecular beam epitaxy

✍ Scribed by Qiu, Y.; Nikishin, S. A.; Temkin, H.; Faleev, N. N.; Kudriavtsev, Yu. A.


Book ID
120637037
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
288 KB
Volume
70
Category
Article
ISSN
0003-6951

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