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Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs[sub 1âx]Bi[sub x]

✍ Scribed by Lu, X.; Beaton, D. A.; Lewis, R. B.; Tiedje, T.; Whitwick, M. B.

Book ID: 120072479
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 563 KB
Volume: 92
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2918844

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