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Growth of single-crystalline regions on amorphous insulating substrates by zone-melting recrystallization

✍ Scribed by Scharff, W. ;Erben, J.-W. ;Wolf, A. ;Heber, M. ;Hamann, C. ;Weissmantel, C. ;Voelskov, M. ;Matthäi, J. ;Kögler, R. ;Klabes, R. ;Wieser, E.

Book ID
105377522
Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
228 KB
Volume
82
Category
Article
ISSN
0031-8965

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Low frequency noise measurements and the characterization of bipolar transistors were used for the evaluation of siliconon-insulator (SOI) films obtained by zone-melting recrystallization (ZMR) and epitaxial Si layers grown on them with regard to bipolar complementary metal-oxide-semiconductor (BICM