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Growth of silicon nanowires by electron beam evaporation using indium catalyst

✍ Scribed by R. Rakesh Kumar; K. Narasimha Rao; A.R. Phani

Book ID: 113794965
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 701 KB
Volume: 66
Category: Article
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2011.08.064

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## Abstract Epitaxial silicon nanowhiskers (NWs) were grown on Si(111) substrates by electron beam evaporation (EBE) in a non‐ultra high vacuum environment (base pressure 1–2 × 10^–7^ Torr). Comparably low growth temperatures between 575 and 675 °C were realized making use of the gold driven 1D gro