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Bismuth catalyzed growth of silicon nanowires by electron beam evaporation

โœ Scribed by R. Rakesh Kumar; K. Narasimha Rao; A.R. Phani

Book ID
113796045
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
726 KB
Volume
82
Category
Article
ISSN
0167-577X

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## Abstract Epitaxial silicon nanowhiskers (NWs) were grown on Si(111) substrates by electron beam evaporation (EBE) in a nonโ€ultra high vacuum environment (base pressure 1โ€“2 ร— 10^โ€“7^ Torr). Comparably low growth temperatures between 575 and 675 ยฐC were realized making use of the gold driven 1D gro