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Growth of rough epitaxial surfaces

✍ Scribed by Abhijit Mookerjee

Book ID
107586738
Publisher
Springer-Verlag
Year
2002
Tongue
English
Weight
112 KB
Volume
58
Category
Article
ISSN
0304-4289

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The n-GaAs layer was successfully grown on (1 0 0) p-type silicon (p-Si) substrate by molecular beam epitaxy (MBE) using rough surface buffer layer (RSi) to reduce the tensile stress in GaAs layer grown on Si substrate. We have reviewed the initial stage and the recombination of GaAs epitaxial layer