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Design of a film surface roughness-minimizing molecular beam epitaxy process by reduced-order modeling of epitaxial growth

✍ Scribed by Gallivan, Martha A.


Book ID
120824630
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
361 KB
Volume
95
Category
Article
ISSN
0021-8979

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Growth of n-GaAs layer on a rough surfac
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The n-GaAs layer was successfully grown on (1 0 0) p-type silicon (p-Si) substrate by molecular beam epitaxy (MBE) using rough surface buffer layer (RSi) to reduce the tensile stress in GaAs layer grown on Si substrate. We have reviewed the initial stage and the recombination of GaAs epitaxial layer