Growth of p-CdTe thin films on n-GaN/sapphire

✍ Scribed by Younghun Jung; Seunju Chun; Donghwan Kim; Jihyun Kim

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 521 KB
• Volume: 326
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2011.01.054

✦ Synopsis

CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 mm/min. In addition, we confirmed that CdCl 2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl 2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.