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Effect of treatments of sapphire substrate on growth of GaN film

✍ Scribed by Masatomo Sumiya; Shunro Fuke


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
113 KB
Volume
244
Category
Article
ISSN
0169-4332

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Infrared reflectance studies of GaN epit
✍ Feng, Z. C.; Hou, Y. T.; Chua, S. J.; Li, M. F. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 107 KB πŸ‘ 2 views

Infrared reflectivity measurements were performed on undoped and Si-doped GaN films grown on sapphire. After analysing the substrate reflectance accurately, a good fit to the measured reflectance has been achieved. By comparison of the measured and calculated spectra, it becomes possible to identify