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Growth of IrO2 Films and Nanorods by Means of CVD: An Example of Compositional and Morphological Control of Nanostructures

โœ Scribed by R.-S. Chen; Y.-S. Chen; Y.-S. Huang; Y.-L. Chen; Y. Chi; C.-S. Liu; K.-K. Tiong; A.J. Carty


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
356 KB
Volume
9
Category
Article
ISSN
0948-1907

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Growth of crystalline SiC films by triod
โœ Kanji Yasui; Masahide Kimura; Tadashi Akahane ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 339 KB ๐Ÿ‘ 2 views

In this study, dimethylchlorosilane diluted by hydrogen is used as the raw material, and silicon carbide crystals are grown on a silicon substrate at low temperature (< 500 ยฐC) by the triode plasma CVD method. The plasma parameters, such as the electron temperature and the space potential in the spa