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Growth of InGaN-based laser diode structure on silicon (111) substrate

✍ Scribed by Shuhaimi, Bin Abu Bakar Ahmad; Kawato, Hiroyuki; Zhu, Youhua; Egawa, Takashi

Book ID
120392797
Publisher
Institute of Physics
Year
2009
Tongue
English
Weight
631 KB
Volume
152
Category
Article
ISSN
1742-6588

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## Abstract We succeeded in fabricating InGaN‐based laser diodes (LDs) with a wavelength of 518 and 488 nm under continuous wave (cw) operation. The both LDs structures were grown on conventional __c__‐plane GaN substrates by metal organic chemical vapor deposition (MOCVD). The threshold current an