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Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

✍ Scribed by Tanuj Dhawan; Renu Tyagi; Rajesh Kumar Bag; Mahavir Singh; Premila Mohan; T. Haldar; R. Murlidharan; R. P. Tandon

Book ID
107470565
Publisher
Springer-Verlag
Year
2009
Tongue
English
Weight
619 KB
Volume
5
Category
Article
ISSN
1931-7573

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## Abstract We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively‐coupled plasma CVD at 400 °C. Gold nanoparticles, attached to silicon oxide through a self‐assembled monolayer, were adopted as cataly