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Growth of highly disordered InGaP on (100) GaAs by molecular beam epitaxy with a GaP decomposition source

✍ Scribed by J.D. Song; J.M. Kim; Y.T. Lee

Book ID: 106024027
Publisher: Springer
Year: 2001
Tongue: English
Weight: 267 KB
Volume: 72
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s003390100848

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