✦ LIBER ✦
Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma source
✍ Scribed by S.E. Hooper; C.T. Foxon; T.S. Cheng; L.C. Jenkins; D.E. Lacklison; J.W. Orton; T. Bestwick; A. Kean; M. Dawson; G. Duggan
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 460 KB
- Volume
- 155
- Category
- Article
- ISSN
- 0022-0248
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