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Growth of GaN Layer from the Single-Source Precursor (Et 2 GaNH 2 ) 3

✍ Scribed by Park, Hyung S.; Waezsada, Said D.; Cowley, Alan H.; Roesky, Herbert W.

Book ID: 126234430
Publisher: American Chemical Society
Year: 1998
Tongue: English
Weight: 189 KB
Volume: 10
Category: Article
ISSN: 0897-4756
DOI: 10.1021/cm980188+

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