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ChemInform Abstract: Growth of GaN Layer from the Single-Source Precursor (Et2GaNH2)3.

✍ Scribed by H. S. PARK; S. D. WAEZSADA; A. H. COWLEY; H. W. ROESKY

Publisher: John Wiley and Sons
Year: 2010
Weight: 31 KB
Volume: 29
Category: Article
ISSN: 0931-7597
DOI: 10.1002/chin.199842015

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## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable v

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**The growth of well‐aligned Ga**~**2**~**O**~**3**~ **nanowires at low temperature** (550 °C) is reported (see Figure). A single‐source precursor of gallium acetylacetonate is employed as the reactant for the growth of the nanowires by a vapor–liquid–solid route. Structural characterization by X‐ra