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Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates

✍ Scribed by Yang, Yi; Ling, Yichuan; Wang, Gongming; Lu, Xihong; Tong, Yexiang; Li, Yat

Book ID
120833930
Publisher
The Royal Society of Chemistry
Year
2013
Tongue
English
Weight
858 KB
Volume
5
Category
Article
ISSN
2040-3364

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## Abstract The formation of ScAlN nanowires on ScN/6H‐SiC(0001) by hydride vapor phase epitaxy (HVPE) was analyzed. The diameters and lengths of the nanowires were 50 to 150 nm and 1 ¡m, respectively. The nanowires had a Al/Sc metal ratio of 95/5 as measured by energy dispersive analysis of X‐rays