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Growth of gallium arsenide

โœ Scribed by N. Sato; T. Nakamura; K. Okane

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
107 KB
Volume
11
Category
Article
ISSN
0144-2449

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The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700ยฐC. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good mo