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Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

✍ Scribed by S. Heikman; S. Keller; S. P. Denbaars; U. K. Mishra

Book ID: 126490211
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 433 KB
Volume: 81
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1490396

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## Abstract Wide bandgap diluted magnetic semiconductors (DMS) have been of interest recently due to theoretical predictions of room temperature ferromagnetism in these materials. However, the mechanism of the observed ferromagnetism of the nitrde‐based DMS is still controversial, and may originate