## Abstract Undoped and Neodymiumβdoped gallium oxide (Ga~2~O~3~) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 Β°C by radiofrequency magnetron sputtering. Postβannealing treatments were carried out at 900 Β°C and 1000 Β°C. The obtain
β¦ LIBER β¦
Growth of europium-doped gallium oxide (Ga2O3:Eu) thin films deposited by homemade DC magnetron sputtering
β Scribed by Putut Marwoto, Sugianto Sugianto, Edy Wibowo
- Book ID
- 120799193
- Publisher
- Springer-Verlag
- Year
- 2012
- Tongue
- English
- Weight
- 313 KB
- Volume
- 6
- Category
- Article
- ISSN
- 2251-7235
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Growth and characterization of gallium o
β
Marie, P. ;Portier, X. ;Cardin, J.
π
Article
π
2008
π
John Wiley and Sons
π
English
β 349 KB
p-Type ZnO thin films prepared by oxidat
p-Type ZnO thin films prepared by oxidation of Zn3N2 thin films deposited by DC magnetron sputtering
β
Chao Wang; Zhenguo Ji; Kun Liu; Yin Xiang; Zhizhen Ye
π
Article
π
2003
π
Elsevier Science
π
English
β 119 KB
Deposition and Characterization of Nanoc
β
Prasanna, Sankaran; Biji, P.; Mohan Rao, G.; Kannan, M.D.; Jayakumar, S.
π
Article
π
2013
π
Trans Tech Publications, Ltd.
π
English
β 631 KB
Structural and optical properties of N-d
β
Yijun Zhang; Jinliang Yan; Qingshan Li; Chong Qu; Liying Zhang; Ting Li
π
Article
π
2011
π
Elsevier Science
π
English
β 930 KB
The N-doped b-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstruc
Characteristics of Al doped zinc oxide (
β
Satoshi Kobayakawa; Yoshikazu Tanaka; Ari Ide-Ektessabi
π
Article
π
2006
π
Elsevier Science
π
English
β 259 KB
Low-temperature deposited Titanium-doped
β
Hanfa Liu; Chengxin Lei
π
Article
π
2011
π
Elsevier Science
π
English
β 641 KB