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Growth of epitaxial silicon layers by ion beam sputtering

โœ Scribed by B. A. Unvala; K. Pearmain


Publisher
Springer
Year
1970
Tongue
English
Weight
263 KB
Volume
5
Category
Article
ISSN
0022-2461

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The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% latti