Growth of CeO2 thin films by metal-organic molecular beam epitaxy
β Scribed by Sumio Ikegawa; Yuichi Motoi
- Book ID
- 113205264
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 478 KB
- Volume
- 281-282
- Category
- Article
- ISSN
- 0040-6090
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π SIMILAR VOLUMES
MgO thin films have been grown on Si 100 substrates at low temperatures of 500-8508C by metal-organic molecular Ε½ . beam epitaxy MOMBE using the solid precursor magnesium acetylacetonate. Oxygen plasma is required to achieve Ε½ . deposition. The composition of the films was determined by Auger electr
HfO 2 dielectric layers were grown on the p-type Si(1 0 0) substrate by metal-organic molecular beam epitaxy (MOMBE). Hafnium-tetrabutoxide [Hf(Oβ’t-C 4 H 9 ) 4 ] was used as a Hf precursor and argon gas was used as a carrier gas. The microstructure and thickness of HfO 2 films were measured by scann