Growth of AlN Films as a Function of Temperature on Mo Films Deposited by Different Techniques
โ Scribed by Yang, Jie; Jiao, Xiangquan; Zhang, Rui; Zhong, Hui; Shi, Yu; Du, Bo
- Book ID
- 121573454
- Publisher
- Springer US
- Year
- 2013
- Tongue
- English
- Weight
- 773 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0361-5235
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๐ SIMILAR VOLUMES
## Abstract Crystalline aluminum nitride (AlN) films have been prepared by plasmaโenhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500โยฐC. A selfโlimiting, constant growth rate per cycle temperature window (100โ200โยฐC) was established which is the major characterist
## Abstract Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on Al