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Growth of 2H-SiC on 6H-SiC by pulsed laser ablation

✍ Scribed by Stan, M. A.; Patton, M. O.; Warner, J. D.; Yang, J. W.; Yang, J. W.


Book ID
121241060
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
782 KB
Volume
64
Category
Article
ISSN
0003-6951

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## Abstract This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, gro