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Growth mechanisms of C60-molecular beam epitaxy on mica

โœ Scribed by H.-G. Busmann; R. Hiss; H. Gaber; I.V. Hartel


Book ID
104198819
Publisher
Elsevier Science
Year
1993
Weight
68 KB
Volume
289
Category
Article
ISSN
0167-2584

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## ลฝ . Molecular beam epitaxy MBE has been applied to a condensation of thin C films with high crystallinity. In situ measurements with 60 ลฝ . reflection high energy electron diffraction RHEED showed an epitaxial growth of C film with a lattice constant of 1.0 nm on a MoS 60 2 ลฝ . ลฝ . substrate. A