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Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering

✍ Scribed by Gusev, E.; Lu, H.; Gustafsson, T.; Garfunkel, E.

Book ID: 111961559
Publisher: The American Physical Society
Year: 1995
Tongue: English
Weight: 851 KB
Volume: 52
Category: Article
ISSN: 1098-0121
DOI: 10.1103/physrevb.52.1759

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