✦ LIBER ✦

Growth mechanism of silicon carbide films on silicon substrates using C60 carbonization

✍ Scribed by Dong Chen; Richard Workman; Dror Sarid

Book ID: 116067576
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 880 KB
Volume: 344
Category: Article
ISSN: 0039-6028
DOI: 10.1016/0039-6028(95)00840-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth characteristics of C60 films on f

Growth characteristics of C60 films on fluorophlogopite and silicon substrates

✍ Guanghua Chen; Guobin Ma 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 218 KB

Silicon carbide formation by annealing C

Silicon carbide formation by annealing C[sub 60] films on silicon

✍ Moro, L.; Paul, A.; Lorents, D. C.; Malhotra, R.; Ruoff, R. S.; Lazzeri, P.; Van 📂 Article 📅 1997 🏛 American Institute of Physics 🌐 English ⚖ 874 KB

Initial stages of the epitaxial silicon

Initial stages of the epitaxial silicon carbide film growth on silicon substrates

✍ Berezhinskii, L. I. ;Vlaskina, S. I. ;Rodionov, V. E. ;Shamuratov, H. A. 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 485 KB

Patterning silicon carbide on silicon by

Patterning silicon carbide on silicon by ion modification of C60 films

✍ L. Moro; A. Paul; D.C. Lorents; R. Malhotra; R.S. Ruoff; L. Jiang 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 252 KB

Features and mechanisms of growth of cub

Features and mechanisms of growth of cubic silicon carbide films on silicon

✍ L. K. Orlov; E. A. Steinman; T. N. Smyslova; N. L. Ivina; A. N. Tereshchenko 📂 Article 📅 2012 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 288 KB

Growth mechanism of vertically aligned c

Growth mechanism of vertically aligned carbon nanotubes on silicon substrates

✍ Young Chul Choi; Dae Woon Kim; Tae Jae Lee; Cheol Jin Lee; Young Hee Lee 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 957 KB