The in situ transmission electron microscope allows us to visualise processes occurring at surfaces and interfaces in real time and is therefore capable of providing detailed, quantitative information about reaction mechanisms. We have used a UHV TEM equipped with in situ growth capabilities to stud
Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopy
β Scribed by F.M. Ross; P.A. Bennett; R.M. Tromp; J. Tersoff; M. Reuter
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 1004 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0968-4328
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract A technique to study nanowire growth processes on locally heated microcantilevers in situ in a transmission electron microscope has been developed. The in situ observations allow the characterization of the nucleation process of silicon wires, as well as the measurement of growth rates
High-resolution transmission electron microscopy (HRTEM) in conjunction with nano-beam (NB) analysis as well as energy dispersive spectrometry analysis have been fruitfully utilized to study the interfacial reactions in the metalΒ±SiΒ±Ge systems. In this paper we report the results of TEM study of the