𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth evolution and superparamagnetism of ultrathin Fe films grown on GaN(0001) surfaces

✍ Scribed by Wong, Ping Kwan Johnny ;Zhang, Wen ;Cui, Xugao ;Will, Iain ;Xu, Yongbing ;Tao, Zikuo ;Li, Xi ;Xie, Zili ;Zhang, Rong


Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
210 KB
Volume
208
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis


Abstract

We have investigated the growth and magnetic properties of Fe films on wurtzite GaN(0001) in the ultrathin regime at room temperature (RT). As found from the coverage‐dependent reflection high‐energy electron diffraction patterns, the Fe film growth proceeds in the three‐dimensional Volmer–Weber (VM) mode at RT. Coexistence of ferromagnetic (FM) and superparamagnetic (SPM) phases has been observed at a Fe thickness of about 5 ML. The zero‐field‐cooling (ZFC) and field‐cooling (FC) magnetization measurements under a constant magnetic field with various temperatures have suggested a Fe blocking temperature (T~B~) of 120 K.


📜 SIMILAR VOLUMES


Epitaxial growth of Fe on GaN(0001): str
✍ Calarco, R. ;Meijers, R. ;Kaluza, N. ;Guzenko, V. A. ;Thillosen, N. ;Schäpers, T 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 126 KB

## Abstract We report results on growth studies of Fe on GaN, in particular with respect to structural and magnetic properties. The growth of GaN has been carried out by molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE) on Si(111) and Al~2~O~3~ substrates, respectively. Fe

Epitaxial growth of C60 and C70 films on
✍ Masatoshi Sakurai; Hirokazu Tada; Koichiro Saiki; Atsushi Koma; Hideyuki Funasak 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 570 KB

Molecular arrangements in CM and C,u films grown epitaxially on GaSe and Moss have been studied by reflection high-energy electron diffraction. C, and C,u molecules were found to form close-packed hexagonal lattices on these substrates with lattice constants of 1.00 LO.02 and 1.08 & 0.02 nm, respect

Surface and defect microstructure of GaN
✍ Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 875 KB

Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show