Epitaxial growth of C60 and C70 films on GaSe (0001) and MoS2 (0001) surfaces

✍ Scribed by Masatoshi Sakurai; Hirokazu Tada; Koichiro Saiki; Atsushi Koma; Hideyuki Funasaka; Yoichiro Kishimoto

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 570 KB
• Volume: 208
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(93)87167-2

✦ Synopsis

Molecular arrangements in CM and C,u films grown epitaxially on GaSe and Moss have been studied by reflection high-energy electron diffraction. C, and C,u molecules were found to form close-packed hexagonal lattices on these substrates with lattice constants of 1.00 LO.02 and 1.08 & 0.02 nm, respectively. The crystal axes of the Cw and CT0 films grown on GaSe (0001) and the Cso films on Moss (000 1) were parallel to the [ 11201 axis of the substrates. On the other hand, the CT0 molecules were arranged along the [ IOiO] axis of the MO& (0001) substrate. The lattice matching condition between a grown film and a substrate is thought to be a determining factor for the growth of the CT0 film on MoS,.