Growth behavior and microstructure of ZnO epilayer on γ-LiAlO2(100) substrate by chemical vapor deposition

✍ Scribed by Chang, Liuwen ;Chou, Mitch M. C. ;Hwang, Teng-Hsing ;Chen, Chun-Wei

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 681 KB
• Volume: 206
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200880412

✦ Synopsis

Abstract

Low lattice‐mismatched γ‐LiAlO~2~(100) substrates were employed to grow ZnO epitaxial films by chemical vapor deposition. The influence of growth temperature on growth behavior of ZnO was investigated. Results indicated that the low lattice‐matched (10$ \bar 1 $0) crystallites nucleate on substrate at all growth temperatures employed. However, a second type of crystallites having an (0001) orientation can also nucleate on substrate at low growth temperature of 575 °C and 640 °C. The growth rate of the later crystallite is, however, higher than that of the (10$ \bar 1 $0) one and finally results in a single crystalline ZnO film having an [0001] azimuthal orientation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)