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Growth and structural characterization of ferromagnetic Cr-doped GaN nanowires

✍ Scribed by Chun, JungHwan ;Kim, DongEon

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
329 KB
Volume
208
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Cr‐doped GaN nanowires have been proposed to be ferromagnetic, resulting from a charge overlap between the N 2p and Cr 3d states and to be more robust than Mn‐doped GaN nanowires. We demonstrated the successful fabrication of single‐crystalline GaN nanowires doped with Cr, which show ferromagnetism at room temperature. The structural study shows that these nanowires have diameters of several tens of nm to a few 100 nm and are single crystalline with a Cr doping concentration of about 2.06 at%.

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## Abstract This paper reports on the growth of Cr‐doped GaN layers by metal organic vapor phase epitaxy (MOVPE) and their characterization for possible spintronic applications. We have used bis (cyclopentadienyl)chromium (Cp~2~Cr) to intentionally incorporate chromium (Cr) during GaN layer growth.