✦ LIBER ✦

Growth and Size Control of Amorphous Silicon Quantum Dots Using SiH4/N2 Plasma

✍ Scribed by N.-M. Park; S. H. Kim; G. Y. Sung; S.-J. Park

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 229 KB
Volume: 8
Category: Article
ISSN: 0948-1907
DOI: 10.1002/1521-3862(20021203)8:6<254::aid-cvde254>3.0.co;2-s

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Optical, vibrational and compositional s

Optical, vibrational and compositional study of amorphous silicon oxynitride thin films grown by an RF plasma using N2O + SiH4 gas mixtures

✍ J. Campmany; J.L. Andújar; A. Canillas; J. Costa; E. Bertran 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 361 KB

Low-temperature epitaxial growth of undo

Low-temperature epitaxial growth of undoped and n-doped silicon by photochemical vapor deposition using SiH4/SiH2Cl2/H2/PH3 mixtures

✍ J.C. Alonso; T. Oshima; A. Yamada; M. Konagai; K. Takahashi 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 612 KB

Low-Temperature Growth of Germanium Quan

Low-Temperature Growth of Germanium Quantum Dots on Silicon Oxide by Inductively Coupled Plasma Chemical Vapor Deposition

✍ J. Shieh; T.S. Ko; H.L. Chen; B.T. Dai; T.C. Chu 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 430 KB 👁 1 views

## Abstract We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively‐coupled plasma CVD at 400 °C. Gold nanoparticles, attached to silicon oxide through a self‐assembled monolayer, were adopted as cataly