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Growth and properties of SiGe structures obtained by selective epitaxy on finite areas

โœ Scribed by L. Vescan; T. Stoica; E. Sutter

Publisher
Springer
Year
2007
Tongue
English
Weight
496 KB
Volume
87
Category
Article
ISSN
1432-0630

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GalnAs/InP multilayer structures have been grown by chemical beam epitaxy in windows opened in SiO2 masks deposited on (I)01) InP substrates. The windows were narrow lines of width varying between 20 and 2pro, oriented along the [01 !] direction. The growth conditions, substratc temperature and V/Il