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Growth and properties of high purity LPE-GaAs

✍ Scribed by Lin Lanying; Fang Zhaoqiang; Zhou Bojun; Zhu Suzhen; Xiang Xianbi; Wu Rangyuan


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
698 KB
Volume
56
Category
Article
ISSN
0022-0248

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## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InP‐melts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob

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