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Growth and properties of GaAs and GaN films and low-dimensional GaAs/QWsInGaAs structures on Si substrates with a Ge buffer layer

โœ Scribed by Buzynin, Yu. N.; Shengurov, V. G.; Zvonkov, B. N.; Buzynin, A. N.; Khrykin, O. I.; Drozdov, M. N.; Drozdov, Yu. N.; Denisov, S. A.


Book ID
119990649
Publisher
Allerton Press Inc
Year
2012
Tongue
English
Weight
484 KB
Volume
76
Category
Article
ISSN
1062-8738

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GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1ยฑ ยฑx N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality