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Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

โœ Scribed by Ashrafi, A. B. M. Almamun; Ueta, Akio; Avramescu, Adrian; Kumano, Hidekazu; Suemune, Ikuo; Ok, Young-Woo; Seong, Tae-Yeon


Book ID
121691066
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
410 KB
Volume
76
Category
Article
ISSN
0003-6951

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MOCVD Growth and Characterization of GaN
โœ Zhang, X. ;Chua, S. J. ;Feng, Z. C. ;Chen, J. ;Lin, J. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 169 KB ๐Ÿ‘ 2 views

GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1ยฑ ยฑx N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality