Employing two different growth methods: standard molecular beam epitaxy (MBE) and lowtemperature atomic layer epitaxy (ALE) with subsequent annealing, we have obtained highquality quantum dot structures consisting of CdSe embedded in ZnSe. Single dot emission lines are observed in micro-luminescence
โฆ LIBER โฆ
Growth and photoluminescence study of ZnSe quantum dots
โ Scribed by Y. H. Chang; M. H. Chieng; C. C. Tsai; M. C. Harris Liao; Y. F. Chen
- Book ID
- 107452470
- Publisher
- Springer US
- Year
- 2000
- Tongue
- English
- Weight
- 155 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0361-5235
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