Reflection high energy electron diffraction (RHEED) is applied to analyze the particular stages of island formation during the molecular beam epitaxy (MBE) of pseudomorphical CdSe/ZnSe on GaAs(001) using an elevated substrate temperature of T S ΒΌ 400 C. Plan-view transmission electron microscopy (TE
In situ XAFS studies on the growth of ZnSe quantum dots
β Scribed by Jinxiang Song; Jing Zhang; Zhi Xie; Shiqiang Wei; Zhiyun Pan; Tiandou Hu; Yaning Xie
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 212 KB
- Volume
- 619
- Category
- Article
- ISSN
- 0168-9002
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β¦ Synopsis
The growth mechanism of glutathione (GSH) capped ZnSe quantum dots (QDs) obtained from the aqueous synthesis method is studied by in situ X-ray absorption fine structure (XAFS) utilizing a flow reactor and synchrotron radiation. Detailed analysis of the Se K-edge EXAFS data reveals that the growth of ZnSe QDs from aqueous synthesis undergoes a fast nucleation process and then a slow growth stage, which follows the two-stage growth mechanism. The ZnSe QDs are strained to minimize the total free energy, and the contraction of Se-Zn bond relaxes with time. This shows the promising capability of in situ XAFS to investigate the growth process of nano-materials synthesized by chemical solution method.
π SIMILAR VOLUMES
Employing two different growth methods: standard molecular beam epitaxy (MBE) and lowtemperature atomic layer epitaxy (ALE) with subsequent annealing, we have obtained highquality quantum dot structures consisting of CdSe embedded in ZnSe. Single dot emission lines are observed in micro-luminescence