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Growth and electronic properties of ZnO epilayers by plasma-assisted molecular beam epitaxy

✍ Scribed by T. E. Murphy; D. Y. Chen; J. D. Phillips

Book ID
107453315
Publisher
Springer US
Year
2005
Tongue
English
Weight
153 KB
Volume
34
Category
Article
ISSN
0361-5235

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A growth window for the Mn effusion cell temperature (T Mn ) is demonstrated for epitaxial Mn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at T Mn ΒΌ 700