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Growth and doping of heterostructures for high electron mobilities

✍ Scribed by Arthur C. Gossard; John H. English; Mark Miller; Robert J. Simes

Book ID
107790292
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
260 KB
Volume
95
Category
Article
ISSN
0022-0248

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The structure of InAlN/GaN heterostructu
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## Abstract In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy analysis points out that step flow growth is not easily attained in this system. When the InAlN or AlN interl