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Growth and crystal structure of the layered compound TlGaSe2
✍ Scribed by G. E. Delgado; A. J. Mora; F. V. Pérez; J. González
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 226 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
Abstract
The semiconducting compound TlGaSe~2~ was grown by solid state reaction technique. The crystal structure of this material was confirmed by single‐crystal X‐ray diffraction. TlGaSe~2~ crystallizes in the monoclinic system with space group C2/c (No. 15), Z = 16 and unit cell parameters a = 10.779(2) Å, b = 10.776(1) Å, c = 15.663(5) Å, β = 99.993(6)°. The structural refinement converged to R(F) = 0.0719, R(F^2^) = 0.0652 and S = 1.17. The structure consists of a three‐dimensional arrangement of distorted TlSe~8~ and GaSe~4~ polyhedrons. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
📜 SIMILAR VOLUMES
A new layered compound, \(\mathrm{Tl}_{2} \mathrm{NbO}_{2} \mathrm{PO}_{4}\), has been isolated. It crystallizes in the rhombohedral system, space group \(R \overline{3}\). The cell parameters are \(a=8.746(2) \AA \mathcal{A}, c=44.753(7) \AA, Z=18\). Its structure has been determined from 990 indep