Growth and characterization of Y2O3 thin films

✍ Scribed by Xuerui Cheng; Zeming Qi; Guobin Zhang; Hongjun Zhou; Weiping Zhang; Min Yin

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 266 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2008.10.022

✦ Synopsis

Y 2 O 3 thin films were grown on silicon (1 0 0) substrates by pulsed-laser deposition at different substrate temperatures and O 2 pressures. The structure and composition of films are studied by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The Y 2 O 3 thin films deposited in vacuum strongly oriented their [111] axis of the cubic structure and the film quality depended on the substrate temperature. The magnitude of O 2 pressure obviously influences the film structure and quality. Due to the silicon diffusion and interface reaction during the deposition, yttrium silicate and SiO 2 were formed. The strong relationship between composition and growth condition was discussed.