Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates

✍ Scribed by Mouloud Boudaa; P. Regreny; J. L. Leclercq; M. P. Besland; O. Marty; G. Hollinger

• Book ID: 107453275
• Publisher: Springer US
• Year: 2004
• Tongue: English
• Weight: 546 KB
• Volume: 33
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/s11664-004-0250-3