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Growth and characterization of N-polar InGaN∕GaN multiquantum wells

✍ Scribed by Keller, S.; Fichtenbaum, N. A.; Furukawa, M.; Speck, J. S.; DenBaars, S. P.; Mishra, U. K.


Book ID
121361091
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
311 KB
Volume
90
Category
Article
ISSN
0003-6951

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InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t